SI3460DV features trenchfet power mosfet 100% r g tested product summary v ds (v) r ds(on) ( ) i d (a) 0.027 @ v gs = 4.5 v 6.8 20 0.032 @ v gs = 2.5 v 6.3 0.038 @ v gs = 1.8 v 5.7 (1, 2, 5, 6) d (3) g (4) s n-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: SI3460DV-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.8 5.1 continuous drain current (t j = 150 c) a t a = 70 c i d 5.4 4.1 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.7 0.9 maximum power dissipation a t a = 25 c p d 2.0 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.73 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 45 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 25 30 c/w notes a. surface mounted on 1? x 1? fr4 board. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ma 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 70 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a v gs = 4.5 v, i d = 5.1 a 0.023 0.027 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 4.7 a 0.027 0.032 v gs = 1.8 v, i d = 2 a 0.032 0.038 forward t ransconductance a g fs v ds = 10 v, i d = 5.1 a 25 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 13.5 20 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 5.1 a 2.3 nc gate-drain charge q gd 2.2 gate resistance r g 0.5 2.9 turn-on delay time t d(on) 15 30 rise time t r v dd = 10 v, r l = 10 30 60 turn-off delay time t d(off) v dd = 10 v , r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 70 140 ns fall time t f 30 60 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3460DV product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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